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| Excelics DATA SHEET * * * * * +39.5dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz 0.4 X 12,000 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 300mA PER BIN RANGE ' ' EPA1200A High Efficiency Heterojunction Power FET ' ' ' 6 * 6 * 6 * 6 * 6 * 6 * ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Chip Thickness: 50 10 microns (with > 20 microns Gold Plated Heat Sink (PHS) ) All Dimensions In Microns MIN 38.0 16.5 TYP 39.5 39.5 18.0 13.0 43 MAX UNIT dBm dB % Output Power at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=2GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=36mA 2200 2400 3600 3800 -1.0 4700 mA mS -2.5 V V V o Drain Breakdown Voltage Igd=12mA Source Breakdown Voltage Igs=12mA Thermal Resistance (Au-Sn Eutectic Attach) -11 -7 -15 -14 4 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -3V Vgs Drain Current Idss 3.5A Ids Forward Gate Current 600mA 100mA Igsf Input Power 37dBm @ 3dB Compression Pin o Channel Temperature 175 C 150oC Tch o Storage Temperature -65/175 C -65/150oC Tstg Total Power Dissipation 34 W 28 W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EPA1200A DATA SHEET High Efficiency Heterojunction Power FET S-PARAMETERS FREQ (GHz) 0.500 1.000 1.500 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 8.500 9.000 9.500 10.000 Note: --- S11 --MAG ANG 0.966 -161.3 0.966 -171.3 0.966 -175.0 0.966 -177.1 0.967 -178.5 0.967 -179.6 0.968 179.4 0.969 178.6 0.969 177.8 0.970 177.1 0.971 176.4 0.971 175.7 0.972 175.0 0.973 174.4 0.973 173.8 0.974 173.2 0.974 172.6 0.975 172.0 0.975 171.4 0.976 170.8 8V, 1/2 Idss --- S21 --MAG ANG 7.649 95.5 3.849 86.9 2.555 81.4 1.901 76.8 1.505 72.7 1.239 68.7 1.047 65.1 0.902 61.6 0.788 58.3 0.697 55.2 0.622 52.2 0.559 49.5 0.506 46.9 0.461 44.6 0.422 42.4 0.388 40.4 0.358 38.6 0.332 36.9 0.309 35.4 0.288 34.1 --- S12 --MAG ANG 0.011 16.3 0.012 18.6 0.012 23.8 0.012 29.7 0.013 35.7 0.014 41.4 0.015 46.7 0.016 51.5 0.017 55.6 0.019 59.2 0.020 62.2 0.022 64.6 0.024 66.6 0.026 68.2 0.028 69.4 0.030 70.4 0.032 71.1 0.035 71.6 0.037 71.9 0.039 72.1 --- S22 --MAG ANG 0.675 -175.7 0.683 -176.9 0.690 -177.0 0.698 -176.9 0.707 -176.8 0.718 -176.8 0.729 -176.8 0.742 -177.1 0.754 -177.4 0.767 -177.8 0.779 -178.4 0.791 -179.0 0.803 -179.7 0.814 179.5 0.825 178.7 0.835 177.8 0.845 176.9 0.854 175.9 0.862 175.0 0.870 174.0 The data included 0.7 mils diameter Au bonding wires: 5 gate wires, 20 mils each; 5 drain wires, 12 mils each; 12 source wires, 7 mils each. |
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